Справочник MOSFET. FQI9N08LTU

 

FQI9N08LTU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQI9N08LTU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.3 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 180 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
   Тип корпуса: I2-PAK

 Аналог (замена) для FQI9N08LTU

 

 

FQI9N08LTU Datasheet (PDF)

 ..1. Size:610K  fairchild semi
 fqi9n08ltu.pdf

FQI9N08LTU FQI9N08LTU

June 2000TMQFETQFETQFETQFETFQB9N08L / FQI9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced techno

 7.1. Size:545K  fairchild semi
 fqb9n08tm fqi9n08tu.pdf

FQI9N08LTU FQI9N08LTU

December 2000TMQFETQFETQFETQFETFQB9N08 / FQI9N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology

 9.1. Size:869K  fairchild semi
 fqb9n25ctm fqi9n25ctu.pdf

FQI9N08LTU FQI9N08LTU

QFETFQB9N25C/FQI9N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC)planar stripe, DMOS technology. Low Crss ( typical 45.5 pF)This advanced technology has been especially tailore

 9.2. Size:796K  fairchild semi
 fqb9n50ctm fqb9n50c fqi9n50c fqi9n50ctu.pdf

FQI9N08LTU FQI9N08LTU

TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

 9.3. Size:705K  fairchild semi
 fqb9n50tm fqi9n50tu.pdf

FQI9N08LTU FQI9N08LTU

April 2000TMQFETQFETQFETQFETFQB9N50 / FQI9N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology

 9.4. Size:778K  fairchild semi
 fqb9n15tm fqi9n15tu.pdf

FQI9N08LTU FQI9N08LTU

May 2000TMQFETQFETQFETQFETFQB9N15 / FQI9N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has

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