All MOSFET. IRFY430 Datasheet

 

IRFY430 Datasheet and Replacement


   Type Designator: IRFY430
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30(max) nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO257AA
 

 IRFY430 substitution

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IRFY430 Datasheet (PDF)

 ..1. Size:168K  international rectifier
 irfy430.pdf pdf_icon

IRFY430

PD - 94191IRFY430,IRFY430MPOWER MOSFET500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY430 1.5 4.5A GlassIRFY430M 1.5 4.5A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-stat

 0.1. Size:169K  international rectifier
 irfy430c.pdf pdf_icon

IRFY430

PD - 91291CIRFY430C,IRFY430CMPOWER MOSFET500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY430C 1.5 4.5A CeramicIRFY430CM 1.5 4.5A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo

 0.2. Size:167K  international rectifier
 irfy430cm.pdf pdf_icon

IRFY430

PD - 91291CIRFY430C,IRFY430CMPOWER MOSFET500V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY430C 1.5 4.5A CeramicIRFY430CM 1.5 4.5A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very lo

 0.3. Size:828K  semelab
 irfy430m.pdf pdf_icon

IRFY430

N-CHANNEL POWER MOSFET IRFY430 / IRFY430M BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 500V VGS Gate Source Voltage 20V ID Tc = 25C

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Datasheet: IRFY130 , IRFY130C , IRFY140 , IRFY140C , IRFY240 , IRFY240C , IRFY340 , IRFY340C , IRFZ24N , IRFY430C , IRFY440 , IRFY440C , IRFY9120 , IRFY9120C , IRFY9130 , IRFY9130C , IRFY9140 .

History: STH9N80FI

Keywords - IRFY430 MOSFET datasheet

 IRFY430 cross reference
 IRFY430 equivalent finder
 IRFY430 lookup
 IRFY430 substitution
 IRFY430 replacement

 

 
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