All MOSFET. FQL50N40 Datasheet

 

FQL50N40 Datasheet and Replacement


   Type Designator: FQL50N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 510 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-264
 

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FQL50N40 Datasheet (PDF)

 ..1. Size:785K  fairchild semi
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FQL50N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 50A, 400V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 160 nC)planar stripe, DMOS technology. Low Crss ( typical 105 pF)This advanced technology has be

Datasheet: FQI8N60CTU , FQI8P10TU , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , FQI9N50TU , SKD502T , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA .

History: IPA60R800CE | AOUS66416 | PSMN9R0-25YLC | KTS3C3F30L | RJK03E7DPA | IRF644NS | 2P308B9

Keywords - FQL50N40 MOSFET datasheet

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