FQL50N40 PDF and Equivalents Search

 

FQL50N40 Specs and Replacement

Type Designator: FQL50N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 510 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-264

FQL50N40 substitution

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FQL50N40 datasheet

 ..1. Size:785K  fairchild semi
 fql50n40.pdf pdf_icon

FQL50N40

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 50A, 400V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 160 nC) planar stripe, DMOS technology. Low Crss ( typical 105 pF) This advanced technology has be... See More ⇒

Detailed specifications: FQI8N60CTU , FQI8P10TU , FQI9N08LTU , FQI9N08TU , FQI9N15TU , FQI9N25CTU , FQI9N50CTU , FQI9N50TU , RFP50N06 , FQN1N50CBU , FQN1N50CTA , FQN1N60CBU , FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA .

History: FQD6N40TF

Keywords - FQL50N40 MOSFET specs

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