FQL50N40 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQL50N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 460 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 510 nS
Drain-Source Capacitance (Cd): 1000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
Package: TO-264
FQL50N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQL50N40 Datasheet (PDF)
1.1. fql50n40.pdf 
Size:785K _fairchild_semi
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 50A, 400V, RDS(on) = 0.075Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 160 nC) planar stripe, DMOS technology. • Low Crss ( typical 105 pF) This advanced technology has be
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