All MOSFET. FQN1N50CBU Datasheet

 

FQN1N50CBU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQN1N50CBU

Marking Code: 1N50C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.89 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 0.38 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 4.9 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 28 pF

Maximum Drain-Source On-State Resistance (Rds): 6 Ohm

Package: TO-92

FQN1N50CBU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQN1N50CBU Datasheet (PDF)

1.1. fqn1n50cbu fqn1n50cta.pdf Size:1065K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

January 2006 ® QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS(on) = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typica

2.1. fqn1n50c.pdf Size:1068K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 4.1 pF) min

 5.1. fqn1n60c.pdf Size:683K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimize on-state re

5.2. fqn1n60cbu fqn1n60cta.pdf Size:682K _fairchild_semi

FQN1N50CBU
FQN1N50CBU

® QFET FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS(on) = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 3.5 pF) minimi

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
Back to Top