FQN1N50CBU Datasheet. Specs and Replacement

Type Designator: FQN1N50CBU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO-92

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FQN1N50CBU datasheet

 ..1. Size:1065K  fairchild semi
 fqn1n50cbu fqn1n50cta.pdf pdf_icon

FQN1N50CBU

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒

 6.1. Size:1068K  fairchild semi
 fqn1n50c.pdf pdf_icon

FQN1N50CBU

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒

 9.1. Size:682K  fairchild semi
 fqn1n60cbu fqn1n60cta.pdf pdf_icon

FQN1N50CBU

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi... See More ⇒

 9.2. Size:683K  fairchild semi
 fqn1n60c.pdf pdf_icon

FQN1N50CBU

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi... See More ⇒

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Detailed specifications: FQI8P10TU, FQI9N08LTU, FQI9N08TU, FQI9N15TU, FQI9N25CTU, FQI9N50CTU, FQI9N50TU, FQL50N40, STF13NM60N, FQN1N50CTA, FQN1N60CBU, FQN1N60CTA, FQNL1N50BBU, FQNL1N50BTA, FQNL2N50BBU, FQNL2N50BTA, FQP10N20

Keywords - FQN1N50CBU MOSFET specs

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