IRFY430C PDF and Equivalents Search

 

IRFY430C Specs and Replacement

Type Designator: IRFY430C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 max nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO257AA

IRFY430C substitution

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IRFY430C datasheet

 ..1. Size:169K  international rectifier
 irfy430c.pdf pdf_icon

IRFY430C

PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo... See More ⇒

 0.1. Size:167K  international rectifier
 irfy430cm.pdf pdf_icon

IRFY430C

PD - 91291C IRFY430C,IRFY430CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430C 1.5 4.5A Ceramic IRFY430CM 1.5 4.5A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very lo... See More ⇒

 7.1. Size:168K  international rectifier
 irfy430.pdf pdf_icon

IRFY430C

PD - 94191 IRFY430,IRFY430M POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY430 1.5 4.5A Glass IRFY430M 1.5 4.5A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-stat... See More ⇒

 7.2. Size:828K  semelab
 irfy430m.pdf pdf_icon

IRFY430C

N-CHANNEL POWER MOSFET IRFY430 / IRFY430M BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 500V VGS Gate Source Voltage 20V ID Tc = 25 C... See More ⇒

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Detailed specifications: IRFY130C , IRFY140 , IRFY140C , IRFY240 , IRFY240C , IRFY340 , IRFY340C , IRFY430 , AO4407 , IRFY440 , IRFY440C , IRFY9120 , IRFY9120C , IRFY9130 , IRFY9130C , IRFY9140 , IRFY9140C .

History: IRFY9130

Keywords - IRFY430C MOSFET specs

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