All MOSFET. FQP10N60CF Datasheet

 

FQP10N60CF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQP10N60CF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 169 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 9 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 44 nC
   Rise Time (tr): 69 nS
   Drain-Source Capacitance (Cd): 166 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
   Package: TO-220

 FQP10N60CF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP10N60CF Datasheet (PDF)

 ..1. Size:933K  fairchild semi
 fqp10n60cf fqpf10n60cf.pdf

FQP10N60CF FQP10N60CF

February 2007TMFRFETFQP10N60CF / FQPF10N60CF600V N-Channel MOSFETFeatures Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia

 5.1. Size:1122K  fairchild semi
 fqp10n60c fqpf10n60c.pdf

FQP10N60CF FQP10N60CF

April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall

 5.2. Size:1465K  onsemi
 fqp10n60c fqpf10n60c.pdf

FQP10N60CF FQP10N60CF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:59K  fairchild semi
 fqp10n60.pdf

FQP10N60CF

TIGER ELECTRONIC CO.,LTDProduct specification600V N-Channel MOSFETFQP10N60DESCRIPTIONThese N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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