FQP10N60CF Specs and Replacement

Type Designator: FQP10N60CF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 169 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220

FQP10N60CF substitution

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FQP10N60CF datasheet

 ..1. Size:933K  fairchild semi
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FQP10N60CF

February 2007 TM FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia... See More ⇒

 5.1. Size:1122K  fairchild semi
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FQP10N60CF

April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especiall... See More ⇒

 5.2. Size:1465K  onsemi
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FQP10N60CF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:59K  fairchild semi
 fqp10n60.pdf pdf_icon

FQP10N60CF

TIGER ELECTRONIC CO.,LTD Product specification 600V N-Channel MOSFET FQP10N60 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t... See More ⇒

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Detailed specifications: FQN1N60CTA, FQNL1N50BBU, FQNL1N50BTA, FQNL2N50BBU, FQNL2N50BTA, FQP10N20, FQP10N20CTSTU, FQP10N60, 75N75, FQP11N40, FQP11N50CF, FQP12N60, FQP13N06, FQP16N15, FQP17N08, FQP17N08L, FQP18N20V2

Keywords - FQP10N60CF MOSFET specs

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