FQP10N60CF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQP10N60CF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 169 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 44 nC
Время нарастания (tr): 69 ns
Выходная емкость (Cd): 166 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.8 Ohm
Тип корпуса: TO-220
Аналог (замена) для FQP10N60CF
FQP10N60CF Datasheet (PDF)
fqp10n60cf fqpf10n60cf.pdf
February 2007TMFRFETFQP10N60CF / FQPF10N60CF600V N-Channel MOSFETFeatures Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia
fqp10n60c fqpf10n60c.pdf
April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall
fqp10n60c fqpf10n60c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp10n60.pdf
TIGER ELECTRONIC CO.,LTDProduct specification600V N-Channel MOSFETFQP10N60DESCRIPTIONThese N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t
Другие MOSFET... FQN1N60CTA , FQNL1N50BBU , FQNL1N50BTA , FQNL2N50BBU , FQNL2N50BTA , FQP10N20 , FQP10N20CTSTU , FQP10N60 , 8205A , FQP11N40 , FQP11N50CF , FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , FQP17N08L , FQP18N20V2 .
