FQP18N20V2 Datasheet and Replacement
Type Designator: FQP18N20V2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 123 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 133 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-220
FQP18N20V2 Datasheet (PDF)
fqp18n20v2 fqpf18n20v2.pdf

TMQFETFQP18N20V2/FQPF18N20V2200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailore
fqp18n50v2 fqpf18n50v2.pdf

QFETFQP18N50V2/FQPF18N50V2 500V N-Channel MOSFETFeatures Description 550V @TJ = 150C These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 VDMOS technology. Low gate charge (typical 42 nC)This advanced technology has been especially tailored to mini- Lo
fqp18n50v2.pdf

TMQFETFQP18N50V2/FQPF18N50V2500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailor
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSH25N40 | 2SK3822K | IPB80N04S3-H4 | BLS6G2731S-130 | RT1A045AP | FQD8P10TM | CS6N90FA9H
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History: SSH25N40 | 2SK3822K | IPB80N04S3-H4 | BLS6G2731S-130 | RT1A045AP | FQD8P10TM | CS6N90FA9H



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