FQP18N20V2 Specs and Replacement
Type Designator: FQP18N20V2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 123 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 133 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-220
FQP18N20V2 substitution
FQP18N20V2 Specs
fqp18n20v2 fqpf18n20v2.pdf
TM QFET FQP18N20V2/FQPF18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailore... See More ⇒
fqp18n50v2 fqpf18n50v2.pdf
QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description 550V @TJ = 150 C These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 V DMOS technology. Low gate charge (typical 42 nC) This advanced technology has been especially tailored to mini- Lo... See More ⇒
fqp18n50v2.pdf
TM QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 500V, RDS(on) = 0.265 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor... See More ⇒
Detailed specifications: FQP10N60CF , FQP11N40 , FQP11N50CF , FQP12N60 , FQP13N06 , FQP16N15 , FQP17N08 , FQP17N08L , IRF830 , FQP18N50V2 , FQP19N10 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 .
Keywords - FQP18N20V2 MOSFET specs
FQP18N20V2 cross reference
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FQP18N20V2 replacement
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