FQP1N50 Specs and Replacement

Type Designator: FQP1N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO-220

FQP1N50 substitution

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FQP1N50 datasheet

 ..1. Size:725K  fairchild semi
 fqp1n50.pdf pdf_icon

FQP1N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.4A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been... See More ⇒

 9.1. Size:520K  fairchild semi
 fqp1n60.pdf pdf_icon

FQP1N50

QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V Advanced New Design RDS(ON) = 11.5 Avalanche Rugged Technology ID = 1.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics TO-220 Unrivalled Gate Charge 5.0nC (Typ.) Extended Safe Operating Area 1 Lower RDS(ON) 9.3 (Typ.) 2 3 1. Gate 2. Drain 3. Sou... See More ⇒

Detailed specifications: FQP17N08, FQP17N08L, FQP18N20V2, FQP18N50V2, FQP19N10, FQP19N10L, FQP19N20CTSTU, FQP19N20L, EMB04N03H, FQP1N60, FQP1P50, FQP20N06TSTU, FQP22P10, FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60

Keywords - FQP1N50 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.