All MOSFET. FQP1N50 Datasheet

 

FQP1N50 Datasheet and Replacement


   Type Designator: FQP1N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO-220
 

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FQP1N50 Datasheet (PDF)

 ..1. Size:725K  fairchild semi
 fqp1n50.pdf pdf_icon

FQP1N50

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

 9.1. Size:520K  fairchild semi
 fqp1n60.pdf pdf_icon

FQP1N50

QFET N-CHANNEL FQP1N60FEATURESBVDSS = 600V Advanced New DesignRDS(ON) = 11.5 Avalanche Rugged TechnologyID = 1.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220 Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area1 Lower RDS(ON): 9.3 (Typ.) 231. Gate 2. Drain 3. Sou

Datasheet: FQP17N08 , FQP17N08L , FQP18N20V2 , FQP18N50V2 , FQP19N10 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , 2SK3918 , FQP1N60 , FQP1P50 , FQP20N06TSTU , FQP22P10 , FQP27P06SW82127 , FQP2N30 , FQP2N50 , FQP2N60 .

History: IRFP22N60KPBF | WCM2068 | IRFP22N60K | NCE30D2519K | 24NM60L-TQ2-T | 2SK3479-S | AP3P090N

Keywords - FQP1N50 MOSFET datasheet

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