FQP1P50 Specs and Replacement

Type Designator: FQP1P50

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm

Package: TO-220

FQP1P50 substitution

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FQP1P50 datasheet

 ..1. Size:623K  fairchild semi
 fqp1p50.pdf pdf_icon

FQP1P50

June 2000 TM QFET QFET QFET QFET FQP1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been... See More ⇒

Detailed specifications: FQP18N20V2, FQP18N50V2, FQP19N10, FQP19N10L, FQP19N20CTSTU, FQP19N20L, FQP1N50, FQP1N60, MMIS60R580P, FQP20N06TSTU, FQP22P10, FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25

Keywords - FQP1P50 MOSFET specs

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