All MOSFET. FQP1P50 Datasheet

 

FQP1P50 Datasheet and Replacement


   Type Designator: FQP1P50
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: TO-220
 

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FQP1P50 Datasheet (PDF)

 ..1. Size:623K  fairchild semi
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FQP1P50

June 2000TMQFETQFETQFETQFETFQP1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been

Datasheet: FQP18N20V2 , FQP18N50V2 , FQP19N10 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , 2N7002 , FQP20N06TSTU , FQP22P10 , FQP27P06SW82127 , FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 .

History: RQ5E035AT | SIHFBC30A | AON6816 | NCEAP018N85LL | CHM02N6ANGP | SM6107PSU | TSM3548DCX6

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