IRFY9120
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFY9120
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Id|ⓘ - Maximum Drain Current: 5.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16.3(max)
nC
trⓘ - Rise Time: 100(max)
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.69
Ohm
Package:
TO257AB
IRFY9120
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFY9120
Datasheet (PDF)
..1. Size:11K 1
irfy9120.pdf 
IRFY9120Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
0.1. Size:11K 1
irfy9120c.pdf
IRFY9120CDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
8.1. Size:279K international rectifier
irfy9140m.pdf
PD - 94197CIRFY9140, IRFY9140MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140 0.20 -15.8A GlassIRFY9140M 0.20 -15.8A GlassHEXFET MOSFET technology is the key to InternationalTO-257AARectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very
8.2. Size:828K international rectifier
irfy9130cm.pdf
PD-91293CIRFY9130C, IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves v
8.3. Size:161K international rectifier
irfy9130c.pdf
PD - 91293BIRFY9130C,IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves
8.4. Size:161K international rectifier
irfy9130.pdf
PD - 94195IRFY9130,IRFY9130MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130 0.3 -11.2A GlassIRFY9130M 0.3 -11.2A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low
8.5. Size:254K international rectifier
irfy9140cm.pdf
PD - 91294DIRFY9140C, IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achiev
8.6. Size:223K international rectifier
irfy9140.pdf
PD - 94197AIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET T
8.7. Size:137K international rectifier
irfy9140c.pdf
PD - 91294BIRFY9140C,IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
8.8. Size:11K semelab
irfy9140x.pdf
IRFY9140XDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
8.9. Size:11K semelab
irfy9130m.pdf
IRFY9130MDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
Datasheet: IRFY240
, IRFY240C
, IRFY340
, IRFY340C
, IRFY430
, IRFY430C
, IRFY440
, IRFY440C
, IRFZ46N
, IRFY9120C
, IRFY9130
, IRFY9130C
, IRFY9140
, IRFY9140C
, IRFY9240
, IRFY9240C
, IRFZ10
.
