IRFY9120 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFY9120
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 30 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Максимально допустимый постоянный ток стока |Id|: 5.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 16.3(max) nC
Время нарастания (tr): 100(max) ns
Сопротивление сток-исток открытого транзистора (Rds): 0.69 Ohm
Тип корпуса: TO257AB
IRFY9120 Datasheet (PDF)
irfy9120.pdf
IRFY9120Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9120c.pdf
IRFY9120CDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 5.3A RDS(ON) = 0.69 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9140m.pdf
PD - 94197CIRFY9140, IRFY9140MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140 0.20 -15.8A GlassIRFY9140M 0.20 -15.8A GlassHEXFET MOSFET technology is the key to InternationalTO-257AARectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very
irfy9130cm.pdf
PD-91293CIRFY9130C, IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicTO-257AAHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves v
irfy9130c.pdf
PD - 91293BIRFY9130C,IRFY9130CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130C 0.3 -11.2A CeramicIRFY9130CM 0.3 -11.2A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves
irfy9130.pdf
PD - 94195IRFY9130,IRFY9130MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9130 0.3 -11.2A GlassIRFY9130M 0.3 -11.2A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low
irfy9140cm.pdf
PD - 91294DIRFY9140C, IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achiev
irfy9140.pdf
PD - 94197AIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET T
irfy9140c.pdf
PD - 91294BIRFY9140C,IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve
irfy9140x.pdf
IRFY9140XDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy9130m.pdf
IRFY9130MDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 11.2A RDS(ON) = 0.3 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
Другие MOSFET... IRFY240 , IRFY240C , IRFY340 , IRFY340C , IRFY430 , IRFY430C , IRFY440 , IRFY440C , NCES120R062T4 , IRFY9120C , IRFY9130 , IRFY9130C , IRFY9140 , IRFY9140C , IRFY9240 , IRFY9240C , IRFZ10 .
