All MOSFET. FQP55N06 Datasheet

 

FQP55N06 Datasheet and Replacement


   Type Designator: FQP55N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 133 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-220
 

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FQP55N06 Datasheet (PDF)

 ..1. Size:658K  fairchild semi
 fqp55n06.pdf pdf_icon

FQP55N06

May 2001TMQFETFQP55N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailored to

 8.1. Size:666K  fairchild semi
 fqp55n10.pdf pdf_icon

FQP55N06

August 2000TMQFETQFETQFETQFETFQP55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been

Datasheet: FQP44N08 , FQP44N10F , FQP4N20 , FQP4N25 , FQP4N50 , FQP4N60 , FQP4N90 , FQP4P25 , P55NF06 , FQP58N08 , FQP5N20 , FQP5N20L , FQP5N30 , FQP5N40 , FQP5N50C , FQP5N80 , FQP5N90 .

History: S8045RP | CS50N06P | 2SJ368 | SSM3K335R | NCV8408 | HAT2179R | APT47N60BCFG

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