FQP55N06 Specs and Replacement

Type Designator: FQP55N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 133 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-220

FQP55N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQP55N06 datasheet

 ..1. Size:658K  fairchild semi
 fqp55n06.pdf pdf_icon

FQP55N06

May 2001 TM QFET FQP55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailored to ... See More ⇒

 8.1. Size:666K  fairchild semi
 fqp55n10.pdf pdf_icon

FQP55N06

August 2000 TM QFET QFET QFET QFET FQP55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been... See More ⇒

Detailed specifications: FQP44N08, FQP44N10F, FQP4N20, FQP4N25, FQP4N50, FQP4N60, FQP4N90, FQP4P25, IRF3710, FQP58N08, FQP5N20, FQP5N20L, FQP5N30, FQP5N40, FQP5N50C, FQP5N80, FQP5N90

Keywords - FQP55N06 MOSFET specs

 FQP55N06 cross reference

 FQP55N06 equivalent finder

 FQP55N06 pdf lookup

 FQP55N06 substitution

 FQP55N06 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility