FQP5N90 Specs and Replacement
Type Designator: FQP5N90
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 158
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 5.4
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 110
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3
Ohm
Package:
TO-220
-
MOSFET ⓘ Cross-Reference Search
FQP5N90 datasheet
..1. Size:678K fairchild semi
fqp5n90.pdf 
September 2000 TM QFET QFET QFET QFET FQP5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has be... See More ⇒
9.1. Size:858K fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t... See More ⇒
9.3. Size:744K fairchild semi
fqp5n30.pdf
May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been es... See More ⇒
9.4. Size:606K fairchild semi
fqp5n20l.pdf
August 2001 TM QFET FQP5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially ... See More ⇒
9.5. Size:659K fairchild semi
fqp5n80.pdf
September 2000 TM QFET FQP5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.8A, 800V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 25 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailor... See More ⇒
9.6. Size:677K fairchild semi
fqp5n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been ... See More ⇒
9.7. Size:690K fairchild semi
fqp5n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been ... See More ⇒
9.8. Size:979K onsemi
fqp5n50c fqpf5n50c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒
9.9. Size:839K onsemi
fqp5n60c fqpf5n60c.pdf
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t... See More ⇒
Detailed specifications: FQP55N06
, FQP58N08
, FQP5N20
, FQP5N20L
, FQP5N30
, FQP5N40
, FQP5N50C
, FQP5N80
, IRFP250N
, FQP5P10
, FQP5P20
, FQP630TSTU
, FQP6N15
, FQP6N25
, FQP6N50
, FQP6N50C
, FQP6N60
.
Keywords - FQP5N90 MOSFET specs
FQP5N90 cross reference
FQP5N90 equivalent finder
FQP5N90 pdf lookup
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