All MOSFET. FQP5N90 Datasheet

 

FQP5N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP5N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 158 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 65 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm

Package: TO-220

FQP5N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQP5N90 Datasheet (PDF)

1.1. fqp5n90.pdf Size:678K _fairchild_semi

FQP5N90
FQP5N90

September 2000 TM QFET QFET QFET QFET FQP5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has be

5.1. fqp5n50c fqpf5n50c.pdf Size:879K _fairchild_semi

FQP5N90
FQP5N90

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switchi

5.2. fqp5n20l.pdf Size:606K _fairchild_semi

FQP5N90
FQP5N90

August 2001 TM QFET FQP5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially

 5.3. fqp5n40.pdf Size:690K _fairchild_semi

FQP5N90
FQP5N90

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been

5.4. fqp5n30.pdf Size:744K _fairchild_semi

FQP5N90
FQP5N90

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been es

 5.5. fqp5n60c fqpf5n60c.pdf Size:858K _fairchild_semi

FQP5N90
FQP5N90

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast swi

5.6. fqp5n20.pdf Size:677K _fairchild_semi

FQP5N90
FQP5N90

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

5.7. fqp5n80.pdf Size:659K _fairchild_semi

FQP5N90
FQP5N90

September 2000 TM QFET FQP5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailor

5.8. fqp5n50c.pdf Size:879K _fairchild_semi

FQP5N90
FQP5N90

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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