All MOSFET. FQP5N90 Datasheet

 

FQP5N90 Datasheet and Replacement


   Type Designator: FQP5N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220
 

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FQP5N90 Datasheet (PDF)

 ..1. Size:678K  fairchild semi
 fqp5n90.pdf pdf_icon

FQP5N90

September 2000TMQFETQFETQFETQFETFQP5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has be

 9.1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQP5N90

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 9.2. Size:879K  fairchild semi
 fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf pdf_icon

FQP5N90

TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.3. Size:744K  fairchild semi
 fqp5n30.pdf pdf_icon

FQP5N90

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been es

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Datasheet: FQP55N06 , FQP58N08 , FQP5N20 , FQP5N20L , FQP5N30 , FQP5N40 , FQP5N50C , FQP5N80 , AON7408 , FQP5P10 , FQP5P20 , FQP630TSTU , FQP6N15 , FQP6N25 , FQP6N50 , FQP6N50C , FQP6N60 .

Keywords - FQP5N90 MOSFET datasheet

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