All MOSFET. FQP5P20 Datasheet

 

FQP5P20 Datasheet and Replacement


   Type Designator: FQP5P20
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220
 

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FQP5P20 Datasheet (PDF)

 ..1. Size:624K  fairchild semi
fqp5p20.pdf pdf_icon

FQP5P20

May 2000TMQFETQFETQFETQFETFQP5P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -4.8A, -200V, RDS(on) = 1.4 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 10 nC)minimi

 9.1. Size:644K  fairchild semi
fqp5p10.pdf pdf_icon

FQP5P20

TMQFETFQP5P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.5A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to

Datasheet: FQP5N20 , FQP5N20L , FQP5N30 , FQP5N40 , FQP5N50C , FQP5N80 , FQP5N90 , FQP5P10 , K3569 , FQP630TSTU , FQP6N15 , FQP6N25 , FQP6N50 , FQP6N50C , FQP6N60 , FQP6N80 , IRF40B207 .

History: BSP125 | SSM2318GEN | BUK753R8-80E | LSD70R380GT | AP9576GM | SSM3310GJ

Keywords - FQP5P20 MOSFET datasheet

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