All MOSFET. IRFY9140 Datasheet

 

IRFY9140 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFY9140
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30(max) nC
   trⓘ - Rise Time: 85(max) nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO257AA

 IRFY9140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFY9140 Datasheet (PDF)

 ..1. Size:223K  international rectifier
 irfy9140.pdf

IRFY9140 IRFY9140

PD - 94197AIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MIRFY9140,IRFY9140MPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYTHRU-HOLE (TO-257AA) HEXFET MOSFET T

 0.1. Size:279K  international rectifier
 irfy9140m.pdf

IRFY9140 IRFY9140

PD - 94197CIRFY9140, IRFY9140MPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140 0.20 -15.8A GlassIRFY9140M 0.20 -15.8A GlassHEXFET MOSFET technology is the key to InternationalTO-257AARectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very

 0.2. Size:254K  international rectifier
 irfy9140cm.pdf

IRFY9140 IRFY9140

PD - 91294DIRFY9140C, IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achiev

 0.3. Size:137K  international rectifier
 irfy9140c.pdf

IRFY9140 IRFY9140

PD - 91294BIRFY9140C,IRFY9140CMPOWER MOSFET 100V, P-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY9140C 0.20 -15.8A CeramicIRFY9140CM 0.20 -15.8A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieve

 0.4. Size:11K  semelab
 irfy9140x.pdf

IRFY9140

IRFY9140XDimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 100V ID = 15.8A RDS(ON) = 0.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,

Datasheet: IRFY430 , IRFY430C , IRFY440 , IRFY440C , IRFY9120 , IRFY9120C , IRFY9130 , IRFY9130C , IRF9540N , IRFY9140C , IRFY9240 , IRFY9240C , IRFZ10 , IRFZ12 , IRFZ14 , IRFZ14A , IRFZ15 .

 

 
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