All MOSFET. IRF5210SPBF Datasheet

 

IRF5210SPBF Datasheet and Replacement


   Type Designator: IRF5210SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-263
 

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IRF5210SPBF Datasheet (PDF)

 ..1. Size:310K  international rectifier
irf5210lpbf irf5210spbf.pdf pdf_icon

IRF5210SPBF

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 ..2. Size:310K  international rectifier
irf5210spbf irf5210lpbf.pdf pdf_icon

IRF5210SPBF

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C

 ..3. Size:206K  inchange semiconductor
irf5210spbf.pdf pdf_icon

IRF5210SPBF

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 6.1. Size:186K  international rectifier
irf5210s.pdf pdf_icon

IRF5210SPBF

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFL9014PBF | IXFL60N60

Keywords - IRF5210SPBF MOSFET datasheet

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