IRF5305LPBF Datasheet. Specs and Replacement

Type Designator: IRF5305LPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-262

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IRF5305LPBF datasheet

 ..1. Size:700K  international rectifier
irf5305lpbf irf5305spbf.pdf pdf_icon

IRF5305LPBF

PD - 95957 IRF5305S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE... See More ⇒

 ..2. Size:700K  international rectifier
irf5305spbf irf5305lpbf.pdf pdf_icon

IRF5305LPBF

PD - 95957 IRF5305S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE... See More ⇒

 7.1. Size:171K  international rectifier
irf5305s.pdf pdf_icon

IRF5305LPBF

PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ... See More ⇒

 7.2. Size:124K  international rectifier
irf5305.pdf pdf_icon

IRF5305LPBF

PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area... See More ⇒

Detailed specifications: IRF520NL, IRF520NLPBF, IRF520NPBF, IRF520S, IRF520SPBF, IRF5210LPBF, IRF5210PBF, IRF5210SPBF, STP80NF70, IRF5305PBF, IRF5305SPBF, IRF530NPBF, IRF530NSPBF, IRF530S, IRF540NLPBF, IRF540NPBF, IRF540NSPBF

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