Справочник MOSFET. IRF5305LPBF

 

IRF5305LPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF5305LPBF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 63 nC
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 520 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IRF5305LPBF

 

 

IRF5305LPBF Datasheet (PDF)

 ..1. Size:700K  international rectifier
irf5305lpbf irf5305spbf.pdf

IRF5305LPBF
IRF5305LPBF

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

 ..2. Size:700K  infineon
irf5305spbf irf5305lpbf.pdf

IRF5305LPBF
IRF5305LPBF

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

 7.1. Size:171K  international rectifier
irf5305s.pdf

IRF5305LPBF
IRF5305LPBF

PD - 91386CIRF5305S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5305S)VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 7.2. Size:124K  international rectifier
irf5305.pdf

IRF5305LPBF
IRF5305LPBF

PD - 91385BIRF5305HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 7.3. Size:182K  international rectifier
irf5305pbf.pdf

IRF5305LPBF
IRF5305LPBF

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 7.4. Size:182K  infineon
irf5305pbf.pdf

IRF5305LPBF
IRF5305LPBF

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 7.5. Size:2441K  cn vbsemi
irf5305str.pdf

IRF5305LPBF
IRF5305LPBF

IRF5305STRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Loa

 7.6. Size:241K  inchange semiconductor
irf5305.pdf

IRF5305LPBF
IRF5305LPBF

isc P-Channel MOSFET Transistor IRF5305,IIRF5305FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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