All MOSFET. IRF5M3415 Datasheet

 

IRF5M3415 Datasheet and Replacement


   Type Designator: IRF5M3415
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO-254AA
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IRF5M3415 Datasheet (PDF)

 ..1. Size:111K  international rectifier
 irf5m3415.pdf pdf_icon

IRF5M3415

PD - 94286AHEXFET POWER MOSFET IRF5M3415THRU-HOLE (TO-254AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.049 35A IRF5M3415Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

 8.1. Size:112K  international rectifier
 irf5m3710.pdf pdf_icon

IRF5M3415

PD - 94234HEXFET POWER MOSFET IRF5M3710THRU-HOLE (TO-254AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

 8.2. Size:111K  international rectifier
 irf5m3205.pdf pdf_icon

IRF5M3415

PD - 94292AHEXFET POWER MOSFET IRF5M3205THRU-HOLE (TO-254AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

 9.1. Size:112K  international rectifier
 irf5m5210.pdf pdf_icon

IRF5M3415

PD - 94247HEXFET POWER MOSFET IRF5M5210THRU-HOLE (TO-254AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

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History: BSZ035N03LSG | SVF9N90F

Keywords - IRF5M3415 MOSFET datasheet

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