IRF5M3415 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF5M3415
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 125 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 570 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.049 Ohm
Тип корпуса: TO-254AA
IRF5M3415 Datasheet (PDF)
irf5m3415.pdf
PD - 94286AHEXFET POWER MOSFET IRF5M3415THRU-HOLE (TO-254AA)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.049 35A IRF5M3415Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3710.pdf
PD - 94234HEXFET POWER MOSFET IRF5M3710THRU-HOLE (TO-254AA)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m3205.pdf
PD - 94292AHEXFET POWER MOSFET IRF5M3205THRU-HOLE (TO-254AA)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m5210.pdf
PD - 94247HEXFET POWER MOSFET IRF5M5210THRU-HOLE (TO-254AA)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5m4905.pdf
PD - 94155HEXFET POWER MOSFET IRF5M4905THRU-HOLE (TO-254AA)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -55V 0.03 -35A* IRF5M4905Fifth Generation HEXFET power MOSFETs fromTO-254AAInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
