IRF5M3710 Specs and Replacement

Type Designator: IRF5M3710

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-254AA

IRF5M3710 substitution

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IRF5M3710 datasheet

 ..1. Size:112K  international rectifier
 irf5m3710.pdf pdf_icon

IRF5M3710

PD - 94234 HEXFET POWER MOSFET IRF5M3710 THRU-HOLE (TO-254AA) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.03 35A* IRF5M3710 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒

 8.1. Size:111K  international rectifier
 irf5m3205.pdf pdf_icon

IRF5M3710

PD - 94292A HEXFET POWER MOSFET IRF5M3205 THRU-HOLE (TO-254AA) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 55V 0.015 35A* IRF5M3205 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒

 8.2. Size:111K  international rectifier
 irf5m3415.pdf pdf_icon

IRF5M3710

PD - 94286A HEXFET POWER MOSFET IRF5M3415 THRU-HOLE (TO-254AA) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.049 35A IRF5M3415 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒

 9.1. Size:112K  international rectifier
 irf5m5210.pdf pdf_icon

IRF5M3710

PD - 94247 HEXFET POWER MOSFET IRF5M5210 THRU-HOLE (TO-254AA) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -100V 0.07 -34A IRF5M5210 Fifth Generation HEXFET power MOSFETs from TO-254AA International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒

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Detailed specifications: IRF5801PBF-1, IRF5803D2PBF, IRF5804, IRF5805PBF, IRF5806PBF, IRF5EA1310, IRF5M3205, IRF5M3415, 75N75, IRF5M4905, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905, IRF5N5210, IRF5NJ3315

Keywords - IRF5M3710 MOSFET specs

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