IRF5N3415
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF5N3415
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 37.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 200
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 560
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package: SMD1
IRF5N3415
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF5N3415
Datasheet (PDF)
..1. Size:115K international rectifier
irf5n3415.pdf 
PD - 94267HEXFET POWER MOSFET IRF5N3415SURFACE MOUNT (SMD-1)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.042 37.5A IRF5N3415Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
8.1. Size:114K international rectifier
irf5n3710.pdf
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8.2. Size:171K international rectifier
irf5n3205.pdf
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9.1. Size:171K international rectifier
irf5nj3315.pdf
PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
9.2. Size:114K international rectifier
irf5njz48.pdf
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9.3. Size:115K international rectifier
irf5nj9540.pdf
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9.4. Size:117K international rectifier
irf5n4905.pdf
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9.5. Size:171K international rectifier
irf5n5210.pdf
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9.6. Size:117K international rectifier
irf5nj5305.pdf
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9.7. Size:111K international rectifier
irf5njz34.pdf
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9.8. Size:113K international rectifier
irf5nj540.pdf
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9.9. Size:114K international rectifier
irf5nj6215.pdf
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9.10. Size:1326K cn sps
smirf5n65.pdf
SMIRF5N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3(VGS=10V, ID=2.5A) on-state resistance, provide superior
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