IRF5N3415 - описание и поиск аналогов

 ..1. Size:115K  international rectifier
 irf5n3415.pdf 

PD - 94267 HEXFET POWER MOSFET IRF5N3415 SURFACE MOUNT (SMD-1) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.042 37.5A IRF5N3415 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 8.1. Size:114K  international rectifier
 irf5n3710.pdf 

PD - 94235A HEXFET POWER MOSFET IRF5N3710 SURFACE MOUNT (SMD-1) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.028 45A IRF5N3710 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 8.2. Size:171K  international rectifier
 irf5n3205.pdf 

PD-94302B HEXFET POWER MOSFET IRF5N3205 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N3205 55V 0.008 55A* Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast s

 9.1. Size:171K  international rectifier
 irf5nj3315.pdf 

PD-94287B HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.2. Size:114K  international rectifier
 irf5njz48.pdf 

PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa

 9.3. Size:115K  international rectifier
 irf5nj9540.pdf 

PD - 94038A HEXFET POWER MOSFET IRF5NJ9540 SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with

 9.4. Size:117K  international rectifier
 irf5n4905.pdf 

PD - 94163 HEXFET POWER MOSFET IRF5N4905 SURFACE MOUNT (SMD-1) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.024 -55A* IRF5N4905 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

 9.5. Size:171K  international rectifier
 irf5n5210.pdf 

PD-94154A HEXFET POWER MOSFET IRF5N5210 SURFACE MOUNT (SMD-1) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N5210 -100V 0.060 -31A Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the n L

 9.6. Size:117K  international rectifier
 irf5nj5305.pdf 

PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with th

 9.7. Size:111K  international rectifier
 irf5njz34.pdf 

PD - 94600 IRF5NJZ34 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ34 55V 0.04 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast

 9.8. Size:113K  international rectifier
 irf5nj540.pdf 

PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ540 100V 0.052 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

 9.9. Size:114K  international rectifier
 irf5nj6215.pdf 

PD - 94284A HEXFET POWER MOSFET IRF5NJ6215 SURFACE MOUNT (SMD-0.5) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with t

 9.10. Size:1326K  cn sps
 smirf5n65.pdf 

SMIRF5N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3 (VGS=10V, ID=2.5A) on-state resistance, provide superior