IRF5NJ3315 Specs and Replacement
Type Designator: IRF5NJ3315
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SMD-0.5
IRF5NJ3315 substitution
- MOSFET ⓘ Cross-Reference Search
IRF5NJ3315 datasheet
irf5nj3315.pdf
PD-94287B HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the ... See More ⇒
irf5njz48.pdf
PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa... See More ⇒
irf5nj9540.pdf
PD - 94038A HEXFET POWER MOSFET IRF5NJ9540 SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with ... See More ⇒
irf5nj5305.pdf
PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with th... See More ⇒
Detailed specifications: IRF5M3710, IRF5M4905, IRF5M5210, IRF5N3205, IRF5N3415, IRF5N3710, IRF5N4905, IRF5N5210, IRF830, IRF5NJ5305, IRF5NJ540, IRF5NJ6215, IRF5NJ9540, IRF5NJZ34, IRF5NJZ48, IRF5Y1310CM, IRF5Y31N20
Keywords - IRF5NJ3315 MOSFET specs
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