All MOSFET. IRF6215SPBF Datasheet

 

IRF6215SPBF Datasheet and Replacement


   Type Designator: IRF6215SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-263
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IRF6215SPBF Datasheet (PDF)

 ..1. Size:992K  international rectifier
 irf6215spbf irf6215lpbf.pdf pdf_icon

IRF6215SPBF

PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S

 ..2. Size:992K  international rectifier
 irf6215lpbf irf6215spbf.pdf pdf_icon

IRF6215SPBF

PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S

 6.1. Size:182K  international rectifier
 irf6215s.pdf pdf_icon

IRF6215SPBF

PD - 91643IRF6215S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF6215S)VDSS = -150V Low-profile through-hole (IRF6215L) 175C Operating TemperatureRDS(on) = 0.29 Fast SwitchingG P-ChannelID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 6.2. Size:820K  international rectifier
 auirf6215s.pdf pdf_icon

IRF6215SPBF

AUTOMOTIVE GRADEAUIRF6215SFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DVDSS -150Vl P-Channell Dynamic dV/dT RatingG RDS(on) max. 0.29l 175C Operating TemperatureSID -13Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified *DescriptionSSpec

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - IRF6215SPBF MOSFET datasheet

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