FQPF12N60CT Specs and Replacement

Type Designator: FQPF12N60CT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO-220F

FQPF12N60CT substitution

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FQPF12N60CT datasheet

 ..1. Size:803K  fairchild semi
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FQPF12N60CT

September 2006 QFET FQPF12N60CT 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21 pF) This advanced technology has been especially tailored ... See More ⇒

 4.1. Size:1123K  fairchild semi
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FQPF12N60CT

November 2013 FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored... See More ⇒

 4.2. Size:1170K  fairchild semi
 fqp12n60c fqpf12n60c.pdf pdf_icon

FQPF12N60CT

September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especiall... See More ⇒

 4.3. Size:1123K  onsemi
 fqpf12n60c.pdf pdf_icon

FQPF12N60CT

November 2013 FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored... See More ⇒

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Detailed specifications: FQP9N50, FQPF10N20, FQPF10N60CF, FQPF10N60CT, FQPF10N60CYDTU, FQPF11N40CT, FQPF11N40T, FQPF12N60, SKD502T, FQPF12N60T, FQPF12P10, FQPF12P20, FQPF12P20XDTU, FQPF12P20YDTU, FQPF13N06, FQPF13N10, FQPF13N10L

Keywords - FQPF12N60CT MOSFET specs

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