Справочник MOSFET. FQPF12N60CT

 

FQPF12N60CT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQPF12N60CT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 51 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 48 nC
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 182 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F

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FQPF12N60CT Datasheet (PDF)

 ..1. Size:803K  fairchild semi
 fqpf12n60ct.pdf

FQPF12N60CT FQPF12N60CT

September 2006 QFETFQPF12N60CT600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21 pF)This advanced technology has been especially tailored

 4.1. Size:1123K  fairchild semi
 fqpf12n60c.pdf

FQPF12N60CT FQPF12N60CT

November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored

 4.2. Size:1170K  fairchild semi
 fqp12n60c fqpf12n60c.pdf

FQPF12N60CT FQPF12N60CT

September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall

 4.3. Size:1123K  onsemi
 fqpf12n60c.pdf

FQPF12N60CT FQPF12N60CT

November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored

 4.4. Size:224K  inchange semiconductor
 fqpf12n60c.pdf

FQPF12N60CT FQPF12N60CT

isc N-Channel Mosfet Transistor FQPF12N60CFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A

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History: 10N65K

 

 
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