FQPF16N25 Datasheet and Replacement. Cross Reference Search

FQPF16N25 Datasheet (PDF)

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May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 250V, RDS(on) = 0.23 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been e

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QFETFQP16N25C/FQPF16N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 68 pF)This advanced technology has been especially tailore

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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April 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.6A, 150V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 23 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

Datasheet: FQPF13N10 , FQPF13N10L , FQPF13N50 , FQPF13N50CSDTU , FQPF13N50CT , FQPF13N50T , FQPF14N15 , FQPF14N30 , IRFZ24N , FQPF17N08 , FQPF17N08L , FQPF17N40T , FQPF17P06 , FQPF17P10 , FQPF18N20V2 , FQPF18N50V2 , FQPF19N10L .