FQPF16N25. Аналоги и основные параметры

Наименование производителя: FQPF16N25

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 140 ns

Cossⓘ - Выходная емкость: 190 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FQPF16N25

- подборⓘ MOSFET транзистора по параметрам

 

FQPF16N25 даташит

 ..1. Size:732K  fairchild semi
 fqpf16n25.pdf pdf_icon

FQPF16N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been e

 0.1. Size:1162K  fairchild semi
 fqp16n25c fqpf16n25c.pdf pdf_icon

FQPF16N25

QFET FQP16N25C/FQPF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailore

 0.2. Size:521K  onsemi
 fqpf16n25c.pdf pdf_icon

FQPF16N25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:722K  fairchild semi
 fqpf16n15.pdf pdf_icon

FQPF16N25

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.6A, 150V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 23 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQPF13N10, FQPF13N10L, FQPF13N50, FQPF13N50CSDTU, FQPF13N50CT, FQPF13N50T, FQPF14N15, FQPF14N30, TK10A60D, FQPF17N08, FQPF17N08L, FQPF17N40T, FQPF17P06, FQPF17P10, FQPF18N20V2, FQPF18N50V2, FQPF19N10L