All MOSFET. FQPF19N10L Datasheet

 

FQPF19N10L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQPF19N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 13.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 410 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-220F

 FQPF19N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF19N10L Datasheet (PDF)

 ..1. Size:616K  fairchild semi
 fqpf19n10l.pdf

FQPF19N10L FQPF19N10L

August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h

 5.1. Size:581K  fairchild semi
 fqpf19n10.pdf

FQPF19N10L FQPF19N10L

August 2000TMQFETQFETQFETQFETFQPF19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been

 7.1. Size:686K  fairchild semi
 fqpf19n20t.pdf

FQPF19N10L FQPF19N10L

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

 7.2. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf

FQPF19N10L FQPF19N10L

QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailo

 7.3. Size:691K  fairchild semi
 fqpf19n20.pdf

FQPF19N10L FQPF19N10L

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

 7.4. Size:789K  onsemi
 fqp19n20c fqpf19n20c.pdf

FQPF19N10L FQPF19N10L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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