All MOSFET. FQPF19N10L Datasheet

 

FQPF19N10L Datasheet and Replacement


   Type Designator: FQPF19N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 410 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-220F
 

 FQPF19N10L substitution

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FQPF19N10L Datasheet (PDF)

 ..1. Size:616K  fairchild semi
 fqpf19n10l.pdf pdf_icon

FQPF19N10L

August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h

 5.1. Size:581K  fairchild semi
 fqpf19n10.pdf pdf_icon

FQPF19N10L

August 2000TMQFETQFETQFETQFETFQPF19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been

 7.1. Size:686K  fairchild semi
 fqpf19n20t.pdf pdf_icon

FQPF19N10L

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

 7.2. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQPF19N10L

QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailo

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Datasheet: FQPF16N25 , FQPF17N08 , FQPF17N08L , FQPF17N40T , FQPF17P06 , FQPF17P10 , FQPF18N20V2 , FQPF18N50V2 , 13N50 , FQPF19N20CYDTU , FQPF19N20T , FQPF1N50 , FQPF1N60 , FQPF1N60T , FQPF1P50 , FQPF27N25T , FQPF28N15 .

History: KF3N60I

Keywords - FQPF19N10L MOSFET datasheet

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