FQPF19N20CYDTU Specs and Replacement

Type Designator: FQPF19N20CYDTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO-220F

FQPF19N20CYDTU substitution

- MOSFET ⓘ Cross-Reference Search

 

FQPF19N20CYDTU datasheet

 ..1. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQPF19N20CYDTU

QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailo... See More ⇒

 4.1. Size:789K  onsemi
 fqp19n20c fqpf19n20c.pdf pdf_icon

FQPF19N20CYDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 5.1. Size:686K  fairchild semi
 fqpf19n20t.pdf pdf_icon

FQPF19N20CYDTU

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be... See More ⇒

 5.2. Size:691K  fairchild semi
 fqpf19n20.pdf pdf_icon

FQPF19N20CYDTU

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be... See More ⇒

SHOW MORE

Detailed specifications: FQPF17N08, FQPF17N08L, FQPF17N40T, FQPF17P06, FQPF17P10, FQPF18N20V2, FQPF18N50V2, FQPF19N10L, RFP50N06, FQPF19N20T, FQPF1N50, FQPF1N60, FQPF1N60T, FQPF1P50, FQPF27N25T, FQPF28N15, FQPF28N15T

Keywords - FQPF19N20CYDTU MOSFET specs

 FQPF19N20CYDTU cross reference

 FQPF19N20CYDTU equivalent finder

 FQPF19N20CYDTU pdf lookup

 FQPF19N20CYDTU substitution

 FQPF19N20CYDTU replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs