Справочник MOSFET. FQPF19N20CYDTU

 

FQPF19N20CYDTU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF19N20CYDTU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 43 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40.5 nC
   trⓘ - Время нарастания: 150 ns
   Cossⓘ - Выходная емкость: 195 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

FQPF19N20CYDTU Datasheet (PDF)

 ..1. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQPF19N20CYDTU

QFETFQP19N20C/FQPF19N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40.5 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially tailo

 4.1. Size:789K  onsemi
 fqp19n20c fqpf19n20c.pdf pdf_icon

FQPF19N20CYDTU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:686K  fairchild semi
 fqpf19n20t.pdf pdf_icon

FQPF19N20CYDTU

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

 5.2. Size:691K  fairchild semi
 fqpf19n20.pdf pdf_icon

FQPF19N20CYDTU

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has be

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History: STD5N52K3 | IRFN440 | PE506BA

 

 
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