FQPF44N08 Specs and Replacement
Type Designator: FQPF44N08
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id| ⓘ - Maximum Drain Current: 25
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 170
nS
Cossⓘ -
Output Capacitance: 400
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034
Ohm
Package:
TO-220F
-
MOSFET ⓘ Cross-Reference Search
FQPF44N08 datasheet
..1. Size:668K fairchild semi
fqpf44n08 fqpf44n08t.pdf 
August 2000 TM QFET QFET QFET QFET FQPF44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been e... See More ⇒
7.1. Size:568K fairchild semi
fqpf44n10.pdf
December 2000 TM QFET QFET QFET QFET FQPF44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 27A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is esp... See More ⇒
9.1. Size:549K fairchild semi
fqpf4n60.pdf
April 2000 TM QFET QFET QFET QFET FQPF4N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has been e... See More ⇒
9.2. Size:703K fairchild semi
fqpf47p06.pdf
May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore... See More ⇒
9.3. Size:739K fairchild semi
fqpf4n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been ... See More ⇒
9.4. Size:636K fairchild semi
fqpf4p40.pdf
August 2000 TM QFET QFET QFET QFET FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.4A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has bee... See More ⇒
9.5. Size:899K fairchild semi
fqp4n90c fqpf4n90c.pdf
TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to ... See More ⇒
9.6. Size:701K fairchild semi
fqpf47p06ydtu.pdf
May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailore... See More ⇒
9.7. Size:622K fairchild semi
fqpf4n90.pdf
October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been especially ... See More ⇒
9.8. Size:638K fairchild semi
fqpf4n80.pdf
September 2000 TM QFET FQPF4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tail... See More ⇒
9.9. Size:747K fairchild semi
fqpf46n15.pdf
April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 25.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has b... See More ⇒
9.10. Size:541K fairchild semi
fqpf4n20l.pdf
December 2000 TM QFET QFET QFET QFET FQPF4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technolog... See More ⇒
9.11. Size:715K fairchild semi
fqpf4n20.pdf
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.8A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been... See More ⇒
9.12. Size:954K fairchild semi
fqp45n15v2 fqpf45n15v2.pdf
QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 135 pF) This advanced technology has been especially tailor... See More ⇒
9.13. Size:718K fairchild semi
fqpf4n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been... See More ⇒
9.14. Size:1337K onsemi
fqp4n90c fqpf4n90c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.15. Size:935K onsemi
fqpf47p06 fqpf47p06ydtu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQPF3N40
, FQPF3N50C
, FQPF3N60
, FQPF3N80
, FQPF3N80CYDTU
, FQPF3N90
, FQPF3P20
, FQPF3P50
, AO4407A
, FQPF44N08T
, FQPF44N10
, FQPF46N15
, FQPF47P06YDTU
, FQPF4N20
, FQPF4N20L
, FQPF4N25
, FQPF4N50
.
History: STD95N4F3
Keywords - FQPF44N08 MOSFET specs
FQPF44N08 cross reference
FQPF44N08 equivalent finder
FQPF44N08 pdf lookup
FQPF44N08 substitution
FQPF44N08 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
