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2SJ207 Spec and Replacement


   Type Designator: 2SJ207
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 80 °C
   tr ⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: SC62

 2SJ207 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ207 Specs

 ..1. Size:335K  nec
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2SJ207

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2SJ207

SMD Type MOSFET P-Channel MOSFET 2SJ207 1.70 0.1 Features VDS (V) =-16V ID =-1 A (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 1.5 (VGS =-4V) RDS(ON) 4 (VGS =-2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID -... See More ⇒

 9.1. Size:245K  toshiba
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2SJ207

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒

 9.2. Size:268K  toshiba
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2SJ207

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltag... See More ⇒

Detailed specifications: 2SJ197 , 2SJ198 , 2SJ199 , 2SJ202 , 2SJ203 , 2SJ204 , 2SJ205 , 2SJ206 , IRFP260 , 2SJ208 , 2SJ209 , 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 .

Keywords - 2SJ207 MOSFET specs

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