Справочник MOSFET. 2SJ207

 

2SJ207 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ207

Маркировка: PE

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 2 W

Предельно допустимое напряжение сток-исток |Uds|: 16 V

Предельно допустимое напряжение затвор-исток |Ugs|: 16 V

Максимально допустимый постоянный ток стока |Id|: 1 A

Максимальная температура канала (Tj): 80 °C

Время нарастания (tr): 500 ns

Выходная емкость (Cd): 160 pf

Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm

Тип корпуса: SC62

Аналог (замена) для 2SJ207

 

 

2SJ207 Datasheet (PDF)

0.1. 2sj207.pdf Size:335K _nec

2SJ207
2SJ207

0.2. 2sj207.pdf Size:1261K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ2071.70 0.1 Features VDS (V) =-16V ID =-1 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS =-4V) RDS(ON) 4 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -

 9.1. 2sj201.pdf Size:268K _toshiba

2SJ207
2SJ207

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag

9.2. 2sj200.pdf Size:245K _toshiba

2SJ207
2SJ207

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS 20 VDr

 9.3. 2sj209.pdf Size:422K _nec

2SJ207
2SJ207

9.4. 2sj202.pdf Size:406K _nec

2SJ207
2SJ207

 9.5. 2sj205.pdf Size:307K _nec

2SJ207
2SJ207

9.6. 2sj208.pdf Size:252K _nec

2SJ207
2SJ207

9.7. 2sj206.pdf Size:294K _nec

2SJ207
2SJ207

9.8. 2sj204.pdf Size:323K _nec

2SJ207
2SJ207

9.9. 2sj203.pdf Size:241K _nec

2SJ207
2SJ207

9.10. 2sj209.pdf Size:1232K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ209SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V1 2 ID =-0.1 A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 60 (VGS =-10V) RDS(ON) 100 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS

9.11. 2sj203-3.pdf Size:1308K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ203SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-16V ID =-200m A1 2 RDS(ON) 23 (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 10 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

9.12. 2sj205.pdf Size:1005K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ2051.70 0.1 Features VDS (V) =-16V ID =-0.5 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-4V) RDS(ON) 5 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -

9.13. 2sj208.pdf Size:757K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ2081.70 0.1 Features VDS (V) =-16V ID =-2 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS =-4V) RDS(ON) 3 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -2A Pulsed

9.14. 2sj204-3.pdf Size:1163K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-200m A1 2+0.02 RDS(ON) 8 (VGS =-10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

9.15. 2sj206.pdf Size:992K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ2061.70 0.1 Features VDS (V) =-30V ID =-0.5 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0

9.16. 2sj204.pdf Size:1150K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

9.17. 2sj209-3.pdf Size:1244K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ209SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V ID =-0.1 A1 2+0.02 RDS(ON) 60 (VGS =-10V) +0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 100 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage

9.18. 2sj203.pdf Size:1300K _kexin

2SJ207
2SJ207

SMD Type MOSFETP-Channel MOSFET2SJ203SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) =-16V1 2 ID =-200m A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 23 (VGS =-2.5V) RDS(ON) 10 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VD

Другие MOSFET... 2SJ197 , 2SJ198 , 2SJ199 , 2SJ202 , 2SJ203 , 2SJ204 , 2SJ205 , 2SJ206 , IRFP4227 , 2SJ208 , 2SJ209 , 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 .

 

 
Back to Top