All MOSFET. FQPF4N20 Datasheet

 

FQPF4N20 Datasheet and Replacement


   Type Designator: FQPF4N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
 
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FQPF4N20 Datasheet (PDF)

 ..1. Size:715K  fairchild semi
fqpf4n20.pdf pdf_icon

FQPF4N20

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been

 0.1. Size:541K  fairchild semi
fqpf4n20l.pdf pdf_icon

FQPF4N20

December 2000TMQFETQFETQFETQFETFQPF4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technolog

 7.1. Size:739K  fairchild semi
fqpf4n25.pdf pdf_icon

FQPF4N20

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been

 8.1. Size:549K  fairchild semi
fqpf4n60.pdf pdf_icon

FQPF4N20

April 2000TMQFETQFETQFETQFETFQPF4N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has been e

Datasheet: FQPF3N90 , FQPF3P20 , FQPF3P50 , FQPF44N08 , FQPF44N08T , FQPF44N10 , FQPF46N15 , FQPF47P06YDTU , IRFZ44N , FQPF4N20L , FQPF4N25 , FQPF4N50 , FQPF4N60 , FQPF4N80 , FQPF4N90 , FQPF4P40 , FQPF50N06 .

History: FA38SA50LC

Keywords - FQPF4N20 MOSFET datasheet

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