FQPF5N50 MOSFET Datasheet: N-Ch, 500V, 3A. Full specification with pinout and replacement list

FQPF5N50 Specs and Replacement

Type Designator: FQPF5N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 75 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-220F

FQPF5N50 substitution

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FQPF5N50 datasheet

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been... See More ⇒

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TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- F... See More ⇒

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Detailed specifications: FQPF4P40 , FQPF50N06 , FQPF50N06L , FQPF55N10 , FQPF5N15 , FQPF5N20 , FQPF5N20L , FQPF5N30 , IRFP260N , FQPF5N50CFTU , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU , FQPF5N60 , FQPF5N60CYDTU , FQPF5N80 , FQPF5P10 .