All MOSFET. FQPF5N80 Datasheet

 

FQPF5N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF5N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 2.6 Ohm

Package: TO-220F

FQPF5N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQPF5N80 Datasheet (PDF)

1.1. fqpf5n80.pdf Size:650K _fairchild_semi

FQPF5N80
FQPF5N80

September 2000 TM QFET FQPF5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 800V, RDS(on) = 2.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailo

4.1. fqpf5n50cftu.pdf Size:657K _fairchild_semi

FQPF5N80
FQPF5N80

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 18nC) DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- • F

4.2. fqp5n50c fqpf5n50c.pdf Size:879K _fairchild_semi

FQPF5N80
FQPF5N80

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switchi

 4.3. fqpf5n15.pdf Size:743K _fairchild_semi

FQPF5N80
FQPF5N80

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 150V, RDS(on) = 0.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been e

4.4. fqpf5n60cydtu.pdf Size:858K _fairchild_semi

FQPF5N80
FQPF5N80

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

 4.5. fqpf5n30.pdf Size:758K _fairchild_semi

FQPF5N80
FQPF5N80

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.9A, 300V, RDS(on) = 0.9Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been e

4.6. fqp5n60c fqpf5n60c.pdf Size:858K _fairchild_semi

FQPF5N80
FQPF5N80

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast swi

4.7. fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf Size:879K _fairchild_semi

FQPF5N80
FQPF5N80

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

4.8. fqpf5n50cf.pdf Size:657K _fairchild_semi

FQPF5N80
FQPF5N80

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 ? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- Fast switching m

4.9. fqpf5n60c.pdf Size:1159K _fairchild_semi

FQPF5N80
FQPF5N80

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been

4.10. fqpf5n20.pdf Size:710K _fairchild_semi

FQPF5N80
FQPF5N80

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been

4.11. fqpf5n90.pdf Size:665K _fairchild_semi

FQPF5N80
FQPF5N80

September 2000 TM QFET QFET QFET QFET FQPF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especiall

4.12. fqpf5n40.pdf Size:728K _fairchild_semi

FQPF5N80
FQPF5N80

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially t

4.13. fqpf5n20l.pdf Size:556K _fairchild_semi

FQPF5N80
FQPF5N80

December 2000 TM QFET QFET QFET QFET FQPF5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.5A, 200V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology

4.14. fqpf5n60.pdf Size:624K _fairchild_semi

FQPF5N80
FQPF5N80

TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to • Fas

4.15. fqpf5n50.pdf Size:750K _fairchild_semi

FQPF5N80
FQPF5N80

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been

4.16. fqpf5n50c.pdf Size:879K _fairchild_semi

FQPF5N80
FQPF5N80

TM QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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