Справочник MOSFET. FQPF5N80

 

FQPF5N80 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF5N80
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 47 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.6 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FQPF5N80

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF5N80 Datasheet (PDF)

 ..1. Size:650K  fairchild semi
fqpf5n80.pdfpdf_icon

FQPF5N80

September 2000TMQFETFQPF5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailo

 8.1. Size:858K  fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdfpdf_icon

FQPF5N80

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 8.2. Size:556K  fairchild semi
fqpf5n20l.pdfpdf_icon

FQPF5N80

December 2000TMQFETQFETQFETQFETFQPF5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 8.3. Size:758K  fairchild semi
fqpf5n30.pdfpdf_icon

FQPF5N80

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been e

Другие MOSFET... FQPF5N30 , FQPF5N50 , FQPF5N50CFTU , FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU , FQPF5N60 , FQPF5N60CYDTU , IRF9540 , FQPF5P10 , FQPF6N15 , FQPF6N25 , FQPF6N40C , FQPF6N40CF , FQPF6N40CT , FQPF6N50 , FQPF6N60 .

History: SSM3K16FV | 2SJ382 | TPW60R090MFD | 2SJ119

 

 
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