FQT2P25TF Specs and Replacement
Type Designator: FQT2P25TF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT-223
FQT2P25TF substitution
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FQT2P25TF datasheet
fqt2p25tf.pdf
May 2001 TM QFET FQT2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -0.55A, -250V, RDS(on) = 4.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailore... See More ⇒
fqt2p25.pdf
November 2013 FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Description Features These P-Channel enhancement mode power field effect -0.55 A, -250 V, RDS(on) = 4.0 (Max.) @ VGS = -10 V, ID = -0.275 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 6.5 nC) technology has been especial... See More ⇒
fqt2p25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF, FQT13N06TF, FQT1N60CTFWS, FQT1N80TFWS, 20N50, FQT3P20TF, FQT4N20LTF, FQT4N20TF, FQT4N25TF, FQT5P10TF, FQT7N10LTF, FQT7N10TF, FQU10N20CTU
Keywords - FQT2P25TF MOSFET specs
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History: UF840KG-TF1-T
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