FQT2P25TF. Аналоги и основные параметры

Наименование производителя: FQT2P25TF

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.55 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 40 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm

Тип корпуса: SOT-223

Аналог (замена) для FQT2P25TF

- подборⓘ MOSFET транзистора по параметрам

 

FQT2P25TF даташит

 ..1. Size:652K  fairchild semi
 fqt2p25tf.pdf pdf_icon

FQT2P25TF

May 2001 TM QFET FQT2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -0.55A, -250V, RDS(on) = 4.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailore

 7.1. Size:980K  fairchild semi
 fqt2p25.pdf pdf_icon

FQT2P25TF

November 2013 FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Description Features These P-Channel enhancement mode power field effect -0.55 A, -250 V, RDS(on) = 4.0 (Max.) @ VGS = -10 V, ID = -0.275 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 6.5 nC) technology has been especial

 7.2. Size:988K  onsemi
 fqt2p25.pdf pdf_icon

FQT2P25TF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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