All MOSFET. FQU12N20TU Datasheet

 

FQU12N20TU Datasheet and Replacement


   Type Designator: FQU12N20TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: I-PAK
 

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FQU12N20TU Datasheet (PDF)

 ..1. Size:801K  fairchild semi
 fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf pdf_icon

FQU12N20TU

January 2009QFETFQD12N20 / FQU12N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia

 6.1. Size:699K  fairchild semi
 fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf pdf_icon

FQU12N20TU

January 2009QFETFQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been

Datasheet: FQT4N25TF , FQT5P10TF , FQT7N10LTF , FQT7N10TF , FQU10N20CTU , FQU10N20LTU , FQU10N20TU , FQU11P06TU , IRF9640 , FQU13N06LTU , FQU13N06TU , FQU13N10TU , FQU17P06TU , FQU1N50TU , FQU1N60CTU , FQU1N60TU , FQU1N80TU .

History: IXTM4N100 | VBZA4425 | SSM6L14FE | SI8416DB | HFU2N60U | SSM6L12TU | UML2502G-AE3-R

Keywords - FQU12N20TU MOSFET datasheet

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