FQU12N20TU Specs and Replacement
Type Designator: FQU12N20TU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: I-PAK
FQU12N20TU substitution
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FQU12N20TU datasheet
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf
January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia... See More ⇒
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf
January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been ... See More ⇒
Detailed specifications: FQT4N25TF, FQT5P10TF, FQT7N10LTF, FQT7N10TF, FQU10N20CTU, FQU10N20LTU, FQU10N20TU, FQU11P06TU, IRF1405, FQU13N06LTU, FQU13N06TU, FQU13N10TU, FQU17P06TU, FQU1N50TU, FQU1N60CTU, FQU1N60TU, FQU1N80TU
Keywords - FQU12N20TU MOSFET specs
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