FQU13N06TU Specs and Replacement
Type Designator: FQU13N06TU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: I-PAK
FQU13N06TU substitution
- MOSFET ⓘ Cross-Reference Search
FQU13N06TU datasheet
fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf
January 2009 QFET FQD13N06 / FQU13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially... See More ⇒
fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf
January 2009 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been e... See More ⇒
fqd13n06l fqu13n06l.pdf
FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V, Description ID = 5.5 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 17 pF) planar stripe and DMOS technology. This advanced MOSFET technology has b... See More ⇒
fqu13n06.pdf
FQU13N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secondar... See More ⇒
Detailed specifications: FQT7N10LTF, FQT7N10TF, FQU10N20CTU, FQU10N20LTU, FQU10N20TU, FQU11P06TU, FQU12N20TU, FQU13N06LTU, IRFZ48N, FQU13N10TU, FQU17P06TU, FQU1N50TU, FQU1N60CTU, FQU1N60TU, FQU1N80TU, FQU20N06TU, FQU2N100TU
Keywords - FQU13N06TU MOSFET specs
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FQU13N06TU replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
