Справочник MOSFET. FQU13N06TU

 

FQU13N06TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQU13N06TU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5.8 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: I-PAK

 Аналог (замена) для FQU13N06TU

 

 

FQU13N06TU Datasheet (PDF)

 ..1. Size:731K  fairchild semi
 fqd13n06tf fqd13n06tm fqd13n06 fqu13n06 fqu13n06tu.pdf

FQU13N06TU FQU13N06TU

January 2009QFETFQD13N06 / FQU13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 60V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 6.1. Size:733K  fairchild semi
 fqd13n06ltf fqd13n06ltm fqd13n06l fqu13n06l fqu13n06ltu.pdf

FQU13N06TU FQU13N06TU

January 2009QFETFQD13N06L / FQU13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11A, 60V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been e

 6.2. Size:1008K  onsemi
 fqd13n06l fqu13n06l.pdf

FQU13N06TU FQU13N06TU

FQD13N06L / FQU13N06LN-Channel QFET MOSFET60 V, 11 A, 115 m Features 11 A, 60 V, RDS(on) = 115 m (Max) @ VGS = 10 V,Description ID = 5.5 AThis N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 4.8 nC)produced using ON Semiconductors proprietary Low Crss (Typ. 17 pF)planar stripe and DMOS technology. This advanced MOSFET technology has b

 6.3. Size:1671K  cn vbsemi
 fqu13n06.pdf

FQU13N06TU FQU13N06TU

FQU13N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secondar

 6.4. Size:745K  cn vbsemi
 fqu13n06l.pdf

FQU13N06TU FQU13N06TU

FQU13N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Seconda

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