All MOSFET. FQU1N50TU Datasheet

 

FQU1N50TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU1N50TU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 1.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 4 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 9 Ohm

Package: I-PAK

FQU1N50TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU1N50TU Datasheet (PDF)

1.1. fqu1n50tu.pdf Size:827K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET® FQD1N50 / FQU1N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been especia

5.1. fqd1n60 fqu1n60.pdf Size:543K _fairchild_semi

FQU1N50TU
FQU1N50TU

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been esp

5.2. fqu1n60tu.pdf Size:541K _fairchild_semi

FQU1N50TU
FQU1N50TU

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology

 5.3. fqu1n80.pdf Size:1270K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2014 FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 5.5 nC) technology has been espe

5.4. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to

 5.5. fqd1n60c fqu1n60c.pdf Size:752K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to

5.6. fqu1n80tu.pdf Size:731K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

5.7. fqu1n60ctu.pdf Size:752K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especiall

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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