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FQU1N50TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQU1N50TU

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 25 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 1.1 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 4 nC

Время нарастания (tr): 25 ns

Выходная емкость (Cd): 20 pf

Сопротивление сток-исток открытого транзистора (Rds): 9 Ohm

Тип корпуса: I-PAK

Аналог (замена) для FQU1N50TU

 

 

FQU1N50TU Datasheet (PDF)

1.1. fqu1n50tu.pdf Size:827K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET® FQD1N50 / FQU1N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been especia

5.1. fqd1n60 fqu1n60.pdf Size:543K _fairchild_semi

FQU1N50TU
FQU1N50TU

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been esp

5.2. fqu1n60tu.pdf Size:541K _fairchild_semi

FQU1N50TU
FQU1N50TU

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology

 5.3. fqu1n80.pdf Size:1270K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2014 FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 5.5 nC) technology has been espe

5.4. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to

 5.5. fqd1n60c fqu1n60c.pdf Size:752K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to

5.6. fqu1n80tu.pdf Size:731K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially

5.7. fqu1n60ctu.pdf Size:752K _fairchild_semi

FQU1N50TU
FQU1N50TU

January 2009 QFET® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especiall

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Список транзисторов

Обновления

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |
 

 

 

 

 
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