FQU1N50TU datasheet, подбор замены

 ..1. Size:827K  fairchild semi
 fqd1n50tf fqd1n50tm fqu1n50tu.pdf 

January 2009 QFET FQD1N50 / FQU1N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been especia

 9.1. Size:541K  fairchild semi
 fqd1n60tf fqd1n60tm fqu1n60tu.pdf 

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology

 9.2. Size:731K  fairchild semi
 fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf 

January 2009 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. Low Crss ( typical 2.7pF) This advanced technology has been especially

 9.3. Size:1270K  fairchild semi
 fqu1n80.pdf 

January 2014 FQD1N80 / FQU1N80 N-Channel QFET MOSFET 800 V, 1.0 A, 20 Description Features This N-Channel enhancement mode power MOSFET is 1.0 A, 800 V, RDS(on) = 2 0 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC) technology has been espe

 9.4. Size:543K  fairchild semi
 fqd1n60 fqu1n60.pdf 

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology

 9.5. Size:752K  fairchild semi
 fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf 

January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especiall

 9.6. Size:622K  onsemi
 fqd1n60c fqu1n60c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:1446K  onsemi
 fqd1n80 fqu1n80.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur