2SJ208 Datasheet. Specs and Replacement
Type Designator: 2SJ208 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 80 °C
Electrical Characteristics
tr ⓘ - Rise Time: 540 nS
Cossⓘ - Output Capacitance: 210 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SC62
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2SJ208 substitution
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2SJ208 datasheet
2sj208.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ208 1.70 0.1 Features VDS (V) =-16V ID =-2 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS =-4V) RDS(ON) 3 (VGS =-2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID -2 A Pulsed ... See More ⇒
2sj200.pdf
2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒
2sj201.pdf
2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltag... See More ⇒
Detailed specifications: 2SJ198, 2SJ199, 2SJ202, 2SJ203, 2SJ204, 2SJ205, 2SJ206, 2SJ207, AO3401, 2SJ209, 2SJ210, 2SJ211, 2SJ212, 2SJ218, 2SJ243, 2SJ302, 2SJ303
Keywords - 2SJ208 MOSFET specs
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