All MOSFET. IRFZ40 Datasheet

 

IRFZ40 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 67 nC

Drain-Source Capacitance (Cd): 2200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO220

IRFZ40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ40 Datasheet (PDF)

0.1. irfz40.pdf Size:181K _st

IRFZ40
IRFZ40

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A TYPICAL R = 0.022 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS

0.2. irfz40 irfz42.pdf Size:351K _st

IRFZ40
IRFZ40



 0.3. irfz40.pdf Size:181K _international_rectifier

IRFZ40
IRFZ40

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A TYPICAL R = 0.022 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS

0.4. irfz40pbf sihfz40.pdf Size:1476K _vishay

IRFZ40
IRFZ40

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.028 • Fast Switching Qg (Max.) (nC) 67 • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

 0.5. irfz40 sihfz40.pdf Size:1475K _vishay

IRFZ40
IRFZ40

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.028 • Fast Switching Qg (Max.) (nC) 67 • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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