FQU5N60CTU
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU5N60CTU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 49
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
I-PAK
FQU5N60CTU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU5N60CTU
Datasheet (PDF)
..1. Size:636K fairchild semi
fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf 
October 2008QFETFQD5N60C / FQU5N60C 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especia
6.1. Size:984K onsemi
fqd5n60c fqu5n60c.pdf
FQD5N60C / FQU5N60CN-Channel QFET MOSFET600 V, 2.8 A, 2.5 Features Description 2.8 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, ID = 1.4 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Gate Charge ( Typ. 15 nC)stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF)technology has bee
9.1. Size:695K fairchild semi
fqd5n20 fqu5n20.pdf
April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
9.2. Size:730K fairchild semi
fqd5n40tf fqd5n40tm fqu5n40tu.pdf
April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
9.3. Size:618K fairchild semi
fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf
October 2008QFETFQD5N20L / FQU5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especia
9.4. Size:664K fairchild semi
fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf
October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially
9.5. Size:768K fairchild semi
fqd5n50tf fqu5n50tu.pdf
April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology
9.6. Size:757K fairchild semi
fqd5n30 fqu5n30.pdf
May 2000TMQFETQFETQFETQFETFQD5N30 / FQU5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h
9.7. Size:735K fairchild semi
fqu5n40 fqd5n40.pdf
April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology
Datasheet: WPB4002
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